Center for Advanced Materials Processing (CAMP)
21st Annual Symposium on Chemical Mechanical Planarization
August 13 -16, 2017
Crowne Plaza
Lake Placid, NY
Entegris will present the following posters on Monday, August 14:
Challenges and Solutions for Post-CMP Cleaning of Dielectric Surfaces Contaminated with Ceria Nanoparticles – Mechanistic Aspects of Bond Breaking and Particle-Substrate Interfacial Interactions
Daniela White, Thomas Parson, Ruben Lieten, and Michael White
Recent Advances in Copper and Cobalt Post CMP Cleaning
Michael White, Daniela White, Volley Wang, Elizabeth Thomas, Jun Liu, Don Frye and Ruben Lieten
Entegris will present the following technical presentation on Wednesday, August 16:
Challenges and Solutions for Post-CMP Cleaning of Dielectric Surfaces Contaminated with Ceria Nanoparticles – Mechanistic Aspects of Bond Breaking and Particle-Substrate Interfacial Interactions
Daniela White, Atanu Das, Thomas Parson and Michael White
Abstract:
Chemical Mechanical Planarization (CMP) on dielectric substrates requiring a high degree of selectivity (e.g. silicon oxide/silicon nitride, STI) is currently achieved through low pH or high pH ceria dispersions, able to selectively and completely remove silicon oxide with very high removal rates, and with a minimal loss of the nitride sublayer. A typical CMP STI aqueous ceria dispersion contains, in addition to 1-10% cerium dioxide nanoparticles, 1-2% organic additives as oxide removal rate enhancers (carboxylic acids, aminoacids, etc.), nanoparticle stabilizers (surfactants, water-soluble polymers), silicon nitride passivators and buffers. Following the CMP processes, both silicon oxide and silicon nitride surfaces are highly contaminated with ceria particles and slurry additives, most of them adsorbed via long range or short range intermolecular forces of adhesion based on: chemisorption, physisorption, hydrogen bonding, electrostatic, van der Waals, etc. Since both ceria surface properties and organic additives in CMP slurries from different manufacturers could vary widely, a comprehensive understanding of surface interactions using wafer-particle and wafer-organic additives is critical prior the development of high-performance cleaning formulations.
In this presentation, we will discuss several mechanistic considerations on forming and breaking particle/surface bonds in the CMP process. Commercial ceria particles were characterized for size, redox activity, Ce3+/Ce4+, acidity, basicity, pH IEP, using a large variety of experimental techniques: UV-VIS, Raman and FTIR spectroscopy, potentiometric titrations and cleaning performance was correlated with the particles surface properties.
We will also share experimental cleaning data from the use of a new high-performance, post-CMP cleaning formulation from Entegris that appears to remove slurry organic contaminants and ceria nanoparticles on PETEOS and silicon nitride substrates up to 150 times better than commodities, such as dilute HF, SC-1 and various other solutions, or combinations thereof.
The minimal post-CMP ceria surface contamination is strongly supported by ICP-MS data and strongly correlated with SEM-EDS, AFM, DFM (Dark Field Microscopy), XPS, FTIR, UV-VIS, etc.
Center for Advanced Materials Processing (CAMP)
21st Annual Symposium on Chemical Mechanical Planarization
August 13 -16, 2017
Crowne Plaza
Lake Placid, NY
Entegris will present the following posters on Monday, August 14:
Challenges and Solutions for Post-CMP Cleaning of Dielectric Surfaces Contaminated with Ceria Nanoparticles – Mechanistic Aspects of Bond Breaking and Particle-Substrate Interfacial Interactions
Daniela White, Thomas Parson, Ruben Lieten, and Michael White
Recent Advances in Copper and Cobalt Post CMP Cleaning
Michael White, Daniela White, Volley Wang, Elizabeth Thomas, Jun Liu, Don Frye and Ruben Lieten
Entegris will present the following technical presentation on Wednesday, August 16:
Challenges and Solutions for Post-CMP Cleaning of Dielectric Surfaces Contaminated with Ceria Nanoparticles – Mechanistic Aspects of Bond Breaking and Particle-Substrate Interfacial Interactions
Daniela White, Atanu Das, Thomas Parson and Michael White
Abstract:
Chemical Mechanical Planarization (CMP) on dielectric substrates requiring a high degree of selectivity (e.g. silicon oxide/silicon nitride, STI) is currently achieved through low pH or high pH ceria dispersions, able to selectively and completely remove silicon oxide with very high removal rates, and with a minimal loss of the nitride sublayer. A typical CMP STI aqueous ceria dispersion contains, in addition to 1-10% cerium dioxide nanoparticles, 1-2% organic additives as oxide removal rate enhancers (carboxylic acids, aminoacids, etc.), nanoparticle stabilizers (surfactants, water-soluble polymers), silicon nitride passivators and buffers. Following the CMP processes, both silicon oxide and silicon nitride surfaces are highly contaminated with ceria particles and slurry additives, most of them adsorbed via long range or short range intermolecular forces of adhesion based on: chemisorption, physisorption, hydrogen bonding, electrostatic, van der Waals, etc. Since both ceria surface properties and organic additives in CMP slurries from different manufacturers could vary widely, a comprehensive understanding of surface interactions using wafer-particle and wafer-organic additives is critical prior the development of high-performance cleaning formulations.
In this presentation, we will discuss several mechanistic considerations on forming and breaking particle/surface bonds in the CMP process. Commercial ceria particles were characterized for size, redox activity, Ce3+/Ce4+, acidity, basicity, pH IEP, using a large variety of experimental techniques: UV-VIS, Raman and FTIR spectroscopy, potentiometric titrations and cleaning performance was correlated with the particles surface properties.
We will also share experimental cleaning data from the use of a new high-performance, post-CMP cleaning formulation from Entegris that appears to remove slurry organic contaminants and ceria nanoparticles on PETEOS and silicon nitride substrates up to 150 times better than commodities, such as dilute HF, SC-1 and various other solutions, or combinations thereof.
The minimal post-CMP ceria surface contamination is strongly supported by ICP-MS data and strongly correlated with SEM-EDS, AFM, DFM (Dark Field Microscopy), XPS, FTIR, UV-VIS, etc.