Join us at the SPIE exhibit February 28 – March 1 to learn how our specialized capabilities in Advanced Lithography can improve your processes.
Entegris will present the following posters February 28 from 6:00 – 8:00 PM in Convention Center Hall 2:
Development of novel purifiers with appropriate functional groups based on solvent polarities
Session PS1: Advanced Processes
Author(s): Tetsu Kohyama, Entegris, Inc. (Japan)
The ongoing efforts by IDMs to improve defectivity on ever shrinking technology nodes and changes of device structure has put pressure on OEMs to reduce metal contamination in photo chemicals. Traditional methods of metals reduction such as distillation, ion-exchange resins service or water-washing processes are increasingly insufficient, particularly for high viscosity polymer solutions. Weak-polar solvents like PGMEA, Cyclohexanone has recently been used to dissolve more hydrophobic photo-resist polymers where current purification technology is inadequate. In this paper the experiments yielded effective purification methods for metal reduction, focusing on solvent polarities based on Hansen Solubility Parameters, and developing optimal purification strategies.
Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration
Session PS4: Filtration
Author(s): Lucia D'Urzo, Hareen Bayana, Entegris GmbH (Germany); Jelle Vandereyken, Philippe Foubert, IMEC (Belgium); Aiwen Wu, Jad Jaber, James Hamzik, Entegris, Inc. (United States)
The ultimate desired behavior for POU filtration is the selective retention of defect precursor molecules contained in commercially available photoresist. This optimal behavior can be achieved via customized membrane functionalization which provides additional non-sieving interactions to selectively capture certain defect precursors. The goal of this study is a comprehensive assessment of different membrane functionalization schemes. Defectivity transferred in a 45 nm line 55 nm space pattern, created with a positive tone chemically amplified resist, has been evaluated on organic under-layer coated wafers. Lithography performance, such as critical dimensions (CD) line width roughness (LWR) and line edge roughness (LER) is also assessed via scanning electron microscopy (SEM).
Join us at the SPIE exhibit February 28 – March 1 to learn how our specialized capabilities in Advanced Lithography can improve your processes.
Entegris will present the following posters February 28 from 6:00 – 8:00 PM in Convention Center Hall 2:
Development of novel purifiers with appropriate functional groups based on solvent polarities
Session PS1: Advanced Processes
Author(s): Tetsu Kohyama, Entegris, Inc. (Japan)
The ongoing efforts by IDMs to improve defectivity on ever shrinking technology nodes and changes of device structure has put pressure on OEMs to reduce metal contamination in photo chemicals. Traditional methods of metals reduction such as distillation, ion-exchange resins service or water-washing processes are increasingly insufficient, particularly for high viscosity polymer solutions. Weak-polar solvents like PGMEA, Cyclohexanone has recently been used to dissolve more hydrophobic photo-resist polymers where current purification technology is inadequate. In this paper the experiments yielded effective purification methods for metal reduction, focusing on solvent polarities based on Hansen Solubility Parameters, and developing optimal purification strategies.
Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration
Session PS4: Filtration
Author(s): Lucia D'Urzo, Hareen Bayana, Entegris GmbH (Germany); Jelle Vandereyken, Philippe Foubert, IMEC (Belgium); Aiwen Wu, Jad Jaber, James Hamzik, Entegris, Inc. (United States)
The ultimate desired behavior for POU filtration is the selective retention of defect precursor molecules contained in commercially available photoresist. This optimal behavior can be achieved via customized membrane functionalization which provides additional non-sieving interactions to selectively capture certain defect precursors. The goal of this study is a comprehensive assessment of different membrane functionalization schemes. Defectivity transferred in a 45 nm line 55 nm space pattern, created with a positive tone chemically amplified resist, has been evaluated on organic under-layer coated wafers. Lithography performance, such as critical dimensions (CD) line width roughness (LWR) and line edge roughness (LER) is also assessed via scanning electron microscopy (SEM).
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