Chemical Mechanical Planarization


Intervening early can prevent scratch defects and prevent costly yield excursions.

In advanced-node chemical mechanical planarization (CMP) applications, scratch defects are often caused by the agglomeration of slurry abrasive particles that have the potential to negatively affect process yield performance. Our technology enables customers to perform particle size analysis online and in real time, directly in the fluid stream process. Intervening early prevents costly yield excursions.

The AccuSizer® SPOS system is recognized as the most accurate and sensitive system for detecting large particle counts (LPC) in CMP slurries. While laser diffraction can measure the mean size of the distribution well, the SPOS technique is hundreds of times more sensitive to tails and LPC.