13th International Symposium on ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES
As a true UCPSS sponsor, we will be happy to meet you on our booth # 7 and are pleased to announce our oral and poster presentations:
Entegris Presentations & Posters
Monday 12 September
SESSION 1A – FEOL: Surface Chemistry Group IV
09.40 | 1.1 - Wet selective SiGe etch to enable Ge nanowire formation
POSTER ANNOUNCEMENT SESSION 1
11.10 – 12.00
P1.6 - Titanium nitride hard mask removal with selectivity to tungsten in FEOL
P1.11 - Post-CMP Cleaners for Tungsten at Advanced Nodes
P1.13 - Evaluation of post etch residue cleaning solutions for the removal of TiN hardmask after dry etch of low-k dielectric materials on 45 nm pitch interconnects
P1.15 - High throughput wet etch solution for BEOL TiN removal
SESSION 3 – FEOL ETCHING
16.30 | 3.1 - Selective etching of silicon oxide and nitride with low oxide etching rate
Wednesday 14 September
SESSION 12 - CONTAMINATION CONTROL
14.30 | 12.1 - A mathematical model forecasting HF adsorption onto Cu-coated wafers as a function of the airborne concentration and moisture (presented by CEA-leti)
Exhibition opening hours
Monday 12 September: 09:30-20:30
Tuesday 13 September: 09:30-17:30
Wednesday 14 September: 09:30-16:30
13th International Symposium on ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES
As a true UCPSS sponsor, we will be happy to meet you on our booth # 7 and are pleased to announce our oral and poster presentations:
Entegris Presentations & Posters
Monday 12 September
SESSION 1A – FEOL: Surface Chemistry Group IV
09.40 | 1.1 - Wet selective SiGe etch to enable Ge nanowire formation
POSTER ANNOUNCEMENT SESSION 1
11.10 – 12.00
P1.6 - Titanium nitride hard mask removal with selectivity to tungsten in FEOL
P1.11 - Post-CMP Cleaners for Tungsten at Advanced Nodes
P1.13 - Evaluation of post etch residue cleaning solutions for the removal of TiN hardmask after dry etch of low-k dielectric materials on 45 nm pitch interconnects
P1.15 - High throughput wet etch solution for BEOL TiN removal
SESSION 3 – FEOL ETCHING
16.30 | 3.1 - Selective etching of silicon oxide and nitride with low oxide etching rate
Wednesday 14 September
SESSION 12 - CONTAMINATION CONTROL
14.30 | 12.1 - A mathematical model forecasting HF adsorption onto Cu-coated wafers as a function of the airborne concentration and moisture (presented by CEA-leti)
Exhibition opening hours
Monday 12 September: 09:30-20:30
Tuesday 13 September: 09:30-17:30
Wednesday 14 September: 09:30-16:30