Join Us
At ALD/ALE 2026, Entegris researchers will contribute peer‑reviewed technical work focused on precursor chemistry, oxidation pathways, and film performance in advanced device architectures. These Entegris‑led studies reflect our direct engagement with challenges central to the ALD community, including high‑aspect‑ratio conformality, precursor safety and volatility, impurity control, and the development of manufacturable process windows.
Presentation
July 1, 2:15 pm – 2:30 pm
High‑Aspect‑Ratio Integrations: A Path to Full Conformality from HfCl₄ and Select Oxidizers
Presenter:
Rong Zhao, Entegris
This presentation reports a systematic study of HfCl₄‑based ALD processes using alternate oxidizer strategies to overcome the growth‑per‑cycle and penetration limitations associated with ozone‑only processing. Mixed‑oxidizer and blended‑gas approaches demonstrate improved GPC, enhanced within‑wafer uniformity, and near‑ideal conformality in features with aspect ratios up to 11:1. Experimental results are supported by SIMS analysis, high‑temperature annealing stability studies, and DFT simulations that clarify the underlying surface reaction mechanisms.
Poster Presentation
June 20, 5:45 pm – 7:00 pm
Indium Precursors Targeting ALD of Indium Films
Presenter:
David Ermert, Ph.D., Principal Scientist, Entegris
This poster presents a study of structurally diverse indium precursor chemistries developed to address safety, volatility, and process challenges associated with incumbent materials such as trimethylindium. The work includes physical property characterization, thermal analysis, and ALD film‑growth results for In₂O₃ using a newly developed non‑pyrophoric organometallic indium precursor.