Join Us | Booth 2, Ground Floor
Entegris delivers high-purity materials and engineered components that help improve beam current and stability, reduce contamination, and enable consistent, high-quality processes and enhanced performance. Our solutions support multiple critical areas of the implant tool - from ion source to wafer handling. Visit Entegris at Booth #2 on the ground floor to learn how our technologies help optimize implant tool performance:
Specialty Gases
High-purity dopant materials and advanced delivery solutions that support reliable ion generation and process control.
Synthetic Graphite Components
Engineered graphite materials that protect critical surfaces, support beamline stability, and help reduce contamination.
Electrostatic Chucks and Advanced Coatings
Solutions designed to improve wafer handling, extend component life, minimize particle generation, and enhance process consistency.
Connect with our team at IIT 2026 to discover how Entegris materials innovations help semiconductor manufacturers achieve cleaner processes, greater reliability, and improved implant performance.
Poster Presentations
Monday, September 21st | 5:10 - 6:10 p.m.
Wafer Contact Surface Coatings for High-Temperature Electrostatic Chucks
Authors:
N. Gunda, Zheng Zhou
Advanced wafer-contact surface coatings developed for high-temperature electrostatic chucks combine high purity, thermal stability, low particle generation, and diffusion barrier performance. The coating technology also enables selective surface feature formation, including mesas and seal rings, directly on the chuck surface.
Monday, September 21st | 5:10 - 6:10 p.m.
Reduction of Wafer Edge Exclusion Zone Through Improved Wafer Cooling in Electrostatic Chucks
Authors:
Jakub Rybczynski, Murat Yaldizli, Chandra Venkatraman
A novel electrostatic chuck design improves wafer cooling near the wafer perimeter, where thermal management is typically limited during ion implantation. Enhanced cooling performance has the potential to reduce wafer edge exclusion zones and increase the usable surface area available for semiconductor device fabrication.
Monday, September 21st | 5:10 - 6:10 p.m.
Introduction of the VIISta® HCP+ Implanter and Process Development at the Entegris Ion Implant Process Efficiency Research Laboratory (IIPERL)
Authors:
Ying Tang, Taylor Price, Mike Wodjenski, Ed Jones
Entegris' Ion Implant Process Efficiency Research Laboratory (IIPERL) has expanded with the installation of a VIISta® HCP+ high-current ion implanter, providing full manufacturing-class 300 mm wafer implantation capability. Initial studies using BF₃/H₂ gas mixtures demonstrate how the platform enables advanced process development, materials evaluation, and production-relevant ion implantation research.
Monday, September 21st | 5:10 - 6:10 p.m.
Investigation of Electrical Breakdown Risks and Safety Considerations in Remote Gas Delivery for High-Voltage Ion Implant Systems
Authors:
Ying Tang, Paolo Moreschini, Taylor Price, Mike Wodjenski, Ed Jones, Joseph Despres, Joseph Sweeney
Remote delivery of dopant gases to high-voltage ion implantation systems presents unique electrical and safety challenges. Experimental studies of insulating materials, tubing geometries, and operating pressures provide insight into electrical breakdown behavior and key risks for implementation of remote gas delivery technologies.
Wednesday, September 23rd | 12:00 - 12:50 p.m.
In-Situ Electrostatic Chuck Cleaning and Interferometric Metrology for Particle Control in Ion Implantation Tools
Authors:
Yuxuan Liu, Jakub Rybczynski, Kenneth Boblak, Chandra Venkatraman
An integrated in-situ cleaning and metrology approach uses a chuck cleaning wafer to remove particles from electrostatic chuck surfaces without venting the implant tool. Automated white-light interferometry quantifies cleaning effectiveness and supports improved contamination control and process reliability.
Thursday, September 24th | 12:00 - 1:00 p.m.
Development of a Model for Wear and Particle Generation from Graphite Components in Ion Implant Environments
Authors:
Wayne Hambek, Chatura Patu, Ying Tang, Taylor Price, Manny Gonzales, Troy Scoggins
A predictive model has been developed to correlate graphite material properties with wear and particle generation under ion implantation conditions. The findings provide guidance for selecting graphite grades that extend component lifetime, reduce contamination, improve tool uptime, and optimize beamline performance.
Thursday, September 24th | 12:00 - 1:00 p.m.
Aluminum Ion Implantation Beam Current and Performance Improvement through the Investigation of Chloride Materials, Co-gases, and Methods
Authors:
Ying Tang, Sanado Barolli, Keith Guan, Ed Jones, Joseph Despres, Brianna Schaefer, Joseph Sweeney, Scott Maxwell, Brian Dlugosch, Hank Chen
Advanced chloride-based source materials and delivery approaches are being evaluated to improve aluminum ion implantation performance for silicon carbide device manufacturing. The work explores aluminum chloride chemistries used alone and co-gases to enhance beam current and implantation efficiency.