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See Past Events
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2024
Silicon carbide (SiC) is having its moment in the sun as chipmakers start to invest more in high-volume production. ICSCRM 2024 is where industry leaders gather to learn and discuss best practices for manufacturing this challenging material. With sessions covering everything from quantum sensing to MOSFET modeling, this is your chance to take home verified and actionable insights that can help enhance your existing workflows.
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Sep 29 - Oct 4 2024 Raleigh, NC United States Raleigh Convention Center
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International Conference on Silicon Carbide and Related Materials (ICSCRM) 2024 September 29, 2024 12:00 PM October 4, 2024 10:00 AM Raleigh Convention Center Silicon carbide (SiC) is having its moment in the sun as chipmakers start to invest more in high-volume production. ICSCRM 2024 is where industry leaders gather to learn and discuss best practices for manufacturing this challenging material. With sessions covering everything from quantum sensing to MOSFET modeling, this is your chance to take home verified and actionable insights that can help enhance your existing workflows. /content/entegris-live/en/home/about-us/events/international-conference-on-silicon-carbide-and-related-materials-icscrm-2024

Join Us | BOOTH 97

Visit the Entegris booth at ICSCRM and learn about our complete solutions for the SiC manufacturing process. Because SiC is both harder and more brittle than traditional silicon, high-volume manufacturing requires altering a large number of processes – epitaxy, deposition, etch, chemical  mechanical planarization (CMP), post-CMP cleaning, and more. Talk to our experts and learn about our fully tested products that can help you streamline the SiC production process with higher throughput and fewer defects, then check out our poster session. 

Register Now!

Featured Poster Session

October 2 | 4:30 – 6:30 p.m. | Exhibit Hall ABC

 

High Removal Rate SiC Slurry

 

Sridevi Alety, R&D Manager, Entegris, Inc.

Defects can often result from the aggressive polishing required for high SiC removal rates. By using a complex mixture of oxidizers, co-oxidizers, rate boosters, and tailored abrasives, Entegris has been able to achieve a 10-12 µm/hour removal rate while reducing defectivity.