The Surface Preparation and Cleaning Conference (SPCC) is an annual event which brings together prominent researchers from the semiconductor industry and the university community to focus on developments and challenges in advanced wafer and mask cleaning and surface preparation technologies.
Visit the SPCC website for more information.
Entegris is a silver sponsor of this conference and will present the following paper during the technical program on Tuesday, April 19th:
Tungsten Post-CMP Cleaning Formulations for Advanced Nodes: 10 nm and 7 nm
Authors: Daniela White, Thomas Parson, Shining Jenq, Don Frye, Steve Medd and Michael White
Summary: Currently, IC manufacturers strongly depend on using Chemical Mechanical Planarization (CMP) processes to planarize and remove excess dielectric layers (ILD) between conducting metal layers, as well as in damascene processes involving metal interconnects lines (copper or tungsten) or plugs (tungsten). Since polishing slurries are usually aqueous low or high pH nanodispersions containing abrasive particles (silica, alumina, zirconia, titania), and a variety of organic additives such as: ligands or complexants for the metals, oxidizers, surfactants, the probability of leaving post-CMP contaminated surfaces is very high and it is usually addressed by the post-CMP cleaning formulations.Currently, IC manufacturers strongly depend on using Chemical Mechanical Planarization (CMP) processes to planarize and remove excess dielectric layers (ILD) between conducting metal layers, as well as in damascene processes involving metal interconnects lines (copper or tungsten) or plugs (tungsten). Since polishing slurries are usually aqueous low or high pH nanodispersions containing abrasive particles (silica, alumina, zirconia, titania), and a variety of organic additives such as: ligands or complexants for the metals, oxidizers, surfactants, the probability of leaving post-CMP contaminated surfaces is very high and it is usually addressed by the post-CMP cleaning formulations.
The Surface Preparation and Cleaning Conference (SPCC) is an annual event which brings together prominent researchers from the semiconductor industry and the university community to focus on developments and challenges in advanced wafer and mask cleaning and surface preparation technologies.
Visit the SPCC website for more information.
Entegris is a silver sponsor of this conference and will present the following paper during the technical program on Tuesday, April 19th:
Tungsten Post-CMP Cleaning Formulations for Advanced Nodes: 10 nm and 7 nm
Authors: Daniela White, Thomas Parson, Shining Jenq, Don Frye, Steve Medd and Michael White
Summary: Currently, IC manufacturers strongly depend on using Chemical Mechanical Planarization (CMP) processes to planarize and remove excess dielectric layers (ILD) between conducting metal layers, as well as in damascene processes involving metal interconnects lines (copper or tungsten) or plugs (tungsten). Since polishing slurries are usually aqueous low or high pH nanodispersions containing abrasive particles (silica, alumina, zirconia, titania), and a variety of organic additives such as: ligands or complexants for the metals, oxidizers, surfactants, the probability of leaving post-CMP contaminated surfaces is very high and it is usually addressed by the post-CMP cleaning formulations.Currently, IC manufacturers strongly depend on using Chemical Mechanical Planarization (CMP) processes to planarize and remove excess dielectric layers (ILD) between conducting metal layers, as well as in damascene processes involving metal interconnects lines (copper or tungsten) or plugs (tungsten). Since polishing slurries are usually aqueous low or high pH nanodispersions containing abrasive particles (silica, alumina, zirconia, titania), and a variety of organic additives such as: ligands or complexants for the metals, oxidizers, surfactants, the probability of leaving post-CMP contaminated surfaces is very high and it is usually addressed by the post-CMP cleaning formulations.
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