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Join Us | Booth 519

Photolithography tools rely on extremely sensitive materials, and Entegris provides the tools to ensure that they perform as expected. Stop by our booth and learn about our filters, purifiers, chemical delivery systems, and EUV reticle pods, all of which ensure that critical photolithography materials arrive safe and free from contamination. Then, check out our poster presentations to learn about our latest advancements. 

Register Now!
SPIE 2024 Spotlight

FEATURED POSTERS

February 28 | 5:30 – 7:00 p.m. | Convention Center, Hall 2

 

High throughput ultra clean UPE filters for sub-5nm node aqueous applications

 

Patricia Chen, Applications Engineer, Entegris, Inc.

Entegris introduces a new pre-wet UPE (ultra-high molecular weight Polyethylene) cartridge filtration technology has been examined incorporating a highly retentive, high throughput of design that maintains exceptional metal cleanliness to meet critical aqueous application.


Wet etch process for high resolution DSA patterning for advanced node DRAM

 

Eri Hirahaha, Field Technology Engineer, Entegris, Inc.

For adopting DSA patterning technology to implementation of upcoming DRAM nodes, a novel, unique, and user-friendly etching process of wet Chemistry was introduced. Our concept performs a good etch selectivity in design which facilitates high resolution patterning, and potentially offers a solution alternative to conventional dry etch techniques especially where CD goes smaller with a higher aspect ratio. This paper will discuss more in detail the concept of wet chemistry and design strategy which were developed for processing PS-b-PMMA (polystyrene-b-polymethyl  methacrylate) on hole patterns for advanced nodes. Besides, we further  open the perspectives of our wet etch proposal to new process development which does not require UV cure. Preliminary experiment and demonstration for a PS-b-PMMA-based DSA pattern structure will also be  discussed.


Next generation ultra clean nylon filter for on-wafer defects reduction enhancement

 

Kanjanawadee Shiraishi, Applications Engineer, Entegris, Inc.

The microstructures on chips become ever more sensitive to microscopic  contaminants as semiconductor technology nodes evolve. Strict control of possible defect sources is required to protect sensitive chip patterns. One such source is the filter itself. In advanced lithography processes such as EUV and ArF, filter cleanliness has become increasingly vital to achieving superior and stable on-wafer defect performance. Filter extractables can result in cone defects, scum defects and other undesirable yield-impacting  issues on wafers. In addition to the adoption of a highly retentive media, this next-generation nylon filter delivers superior defect performance via enhanced raw material cleanliness along with advancements in filter cleaning technology. Cleanliness evaluations in this study demonstrate that the newly developed ultra clean nylon filter has lower levels of metallic  and organic extractables in organic and acidic solvents. Furthermore, the new filter’s high stability and low pH extractables suggest it can be adopted  to certain acidic photochemicals such as used in SiARC and BARC applications.


An update on the improvement in optimization of point-of-use filtration of metal oxide photoresists

 

Tetsu Kohyama, Applications Development Engineer (IMEC Assignee), Entegris, Inc

EUV is particularly susceptible to stochastic imaging defects. Although  standard CAR resists can be exposed with EUV, these materials struggle to achieve resolution targets at manufacturable doses due to limitations in  laser source power and resist sensitivity and contribute to stochastics by  nature of their random distribution of components. An innovative approach with metal-oxide resist can offer an alternative to overcome both EUV resolution and sensitivity limitations, as well as address stochastic defects. Traditional sources of defectivity present another challenge, especially when moving toward high-volume manufacturing. Polyethylene membrane filters have been used for metal oxide EUV resist filtration because of their high retention efficiency and excellent photochemical compatibility. However, newly designed Polyethylene membrane filters with innovative membrane morphology are needed to further lower defectivity rates with these new resists. This study examines the efficacy of optimized filtration design to reduce defects and provides a  a recommendation to achieve lower defect density. 


Updated UPE filter design for point-of-use EUV CAR photoresist filtration for defect improvement

 

Tetsu Kohyama, Applications Development Engineer (IMEC Assignee), Entegris, Inc.

The demand for device scaling has produced more complex processes and expensive multiple-patterning requirements. Broad consensus on the direction of EUV technology has triggered the semiconductor industry to aggressively push new resist material development, particularly  designed to overcome stochastic issues, which coincides with the  establishment of the single-print capability infrastructure for the high NA EUV scanner. Although standard CARs have been struggling to overcome stochastic issues, they have improved significantly to demonstrate 24 nm resolution with single exposure patterning using ASML’s NXE3400B. At the point of use filtration, polyethylene filters have been widely used to eliminate traditional sources of defectivity in photoresist materials thanks to its high retention efficiency and excellent photochemical compatibility. However, newly designed polyethylene filters with innovative membrane morphology are needed to further lower defectivity rates. This study examines the efficacy of optimized filter design to reduce defects and provides a recommendation to achieve lower defect density.