ST Cleaning Solutions


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Considerations for Improving 3D NAND Performance, Reliability, and Yield
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  • Technology Node (nm)
  • Industry
  • Process
ST-44 positive resist stripper is the first positive photoresist stripper specifically formulated from organic solvent blends to be effective in removing hard-to-strip positive photoresists from metal and metal alloy surfaces – surfaces that are sensitive to corrosion from electrolytic or galvanic effects.
Interconnect Technology
  • Al
Technology Node (nm)
  • 250, 130, 90, 65
Industry
  • Semiconductor
Process
  • Post CMP
ST-22 positive resist stripper is a positive photoresist stripper specifically formulated from organic solvent blends to be effective in removing hard-to-strip positive photoresists. ST-22 is completely water soluble, contains no phenols, chlorinated hydrocarbons, or other toxic materials. In addition, ST-22 is formulated for ease of disposal.
Interconnect Technology
  • Al
Technology Node (nm)
  • 250, 130, 90, 65
Industry
  • Semiconductor
Process
  • Post CMP
ST-33 positive resist stripper is formulated from organic solvents to be effective in the removal of positive photoresists from corrosion-sensitive substrates. It has a unique chemistry that eliminates corrosive etching of GaAs and other III-V metals and copper.
Interconnect Technology
  • Al
Technology Node (nm)
  • 250, 130, 90, 65
Industry
  • Semiconductor
Process
  • Post CMP
The Entegris series of ST-200 Solutions has been formulated to remove heavily oxidized plasma etch residues from small geometry devices. The products contain no SARA-reportable components such as ethylene glycol ether based solvents, N-Methylpyrrolidone, or highly reactive materials such as hydroxylamine.
Interconnect Technology
  • Al
Technology Node (nm)
  • 130, 90, 65
Industry
  • Semiconductor
Process
  • Post CMP
ST-28M plasma residue remover has been formulated to remove the residues associated with high energy plasma etchers and small geometry devices. ST-28M can be used to remove both organic and inorganic residues, but is especially effective in removing the residues remaining after today’s high temperature O2 ash processes
Interconnect Technology
  • Al
Technology Node (nm)
  • 250, 130, 90, 65
Industry
  • Semiconductor
Process
  • Post CMP
ST-26S solution contains a complexing agent which greatly enhances the removal of residual metal oxides and other inorganics formed during aggressive plasma etching and ashing. This unique solution effectively permeates heavily oxidized residues and rapidly dissolves them before they can redeposit back onto the substrate. Formulated with an extremely low operating viscosity and a corrosion reducing component, ST-26S is ideal for use in automated photoresist stripping equipment.
Interconnect Technology
  • Al
Technology Node (nm)
  • 250, 130, 90, 65
Industry
  • Semiconductor
Process
  • Post CMP
ST250™ Cu residue remover solution is specifically formulated for maximum compatibility with copper, advanced barrier layer and etch-stop materials.
Interconnect Technology
  • Cu, WLP
Technology Node (nm)
  • 130, 90, 65, 45, 40, 28, 16, 10
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