Entegris is a global leader in contamination control, critical materials handling, and advanced process materials for the semiconductor and other high-tech industries. Entegris is ISO-9001 certified and has manufacturing, customer service and/or research facilities in the United States, China, France, Germany, Israel, Japan, Malaysia, Singapore, South Korea and Taiwan.
Entegris is committed to providing customers the best information possible to ensure optimal product performance. Our resource center provides in-depth product and application information through product data sheets, technical papers, SDSs and more. Be sure to visit the resource center regularly to see updates and new additions.
For 50 years, Entegris has been a provider of critical products and materials used in advanced high-technology manufacturing. These products and materials are often used to make the building blocks of many of the world's most complex microelectronic products, such as computers, mobile devices and phones, data storage components, televisions and monitors, and automobiles.
Using a propriety chemical vapor conversion (CVC) process, Entegris’ process partially converts the outer layers of graphite to SiC. This converts the graphite incompletely, without creating a distinct SiC layer that could delaminate under stress, resulting in a composite SiC shell.
Graphite coated with a .030" (750 microns) infiltrated layer of SUPERSiC®
Increased thermal shock resistance compared to solid SiC
Initial plasma erosion resistance and physical abrasion resistance similar to SiC
Ability to hold a tighter tolerance with an as-converted artifact
Read MoreRead Less
Interested in SUPERSiC®-GS?
Contact your Entegris account manager or
Top of page
Ion implant beamline components
2.18 g/cm3 (0.079 lb/in3)
Total impurity level:
69 MPa (10,000 psi)
Thermal conductivity K:
88 W/m-K (51 Btu-ft/hr/ft2°F)
3050 μΩ-cm (1200 μΩ-in)
Average CTE from 250 –750°C:
4.5 10 -6/K (2.5 10 -6/°F)
1Based on SA / V ratio of 12.5. 24 pt based on 0.25” × 0.5” × 4” MOR bar.