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Recently Published

Jun. 1, 2015

SUPERSiC® Silicon Carbide Materials
Narrow Your Selection
  • Industry
  • Process
  • Bulk Density g/cm3 (lb/in3)
SUPERSiC® is the base converted silicon carbide. This material is ideal for high-temperature and atmospheric processes and harsh process environments.
Industry
  • Semiconductor
  • Industrial
  • Aerospace
Process
  • Deposition
  • Ion Implant
  • Dry Etch
  • Optical Systems
Apparent Density g/cm3 (lb/in3)
  • 3.13 (0.113)
Bulk Density g/cm3 (lb/in3)
  • 2.53 (0.092)
SUPERSiC® that has been coated with a 75 μm Chemical Vapor Deposition (CVD) SiC coating, which seals the surface. See specifications.
Industry
  • LED
  • Semiconductor
  • Industrial
Process
  • Deposition
  • Epitaxy
Apparent Density g/cm3 (lb/in3)
  • 3.15 (0.114)
Bulk Density g/cm3 (lb/in3)
  • 2.55 (0.092)
SUPERSiC®-3CX is SUPERSiC that has been coated twice with a 75 μm CVD SiC coating, which seals the surface. See specifications.
Industry
  • Semiconductor
  • Aerospace
Process
  • Deposition
  • Optical Systems
Apparent Density g/cm3 (lb/in3)
  • 3.15 (0.114)
Bulk Density g/cm3 (lb/in3)
  • 2.55 (0.092)
SUPERSiC®-H is the base converted silicon carbide with extra processing to reduce non-metallic impurities. This material is ideal for high-temperature and atmospheric processes and harsh process environments.
Industry
  • Semiconductor
Process
  • Dry Etch
Apparent Density g/cm3 (lb/in3)
  • 3.15 (0.114)
Bulk Density g/cm3 (lb/in3)
  • 2.53 (0.092)
SUPERSiC® is infiltrated with silicon and coated with a 200µm CVD silicon carbide coating. See specifications.
Industry
  • Aerospace
Process
  • Optical Systems
Apparent Density g/cm3 (lb/in3)
  • 3.13 (0.113)
Bulk Density g/cm3 (lb/in3)
  • 2.95 (0.107)
SUPERSiC® that has been coated with a 75 μm Chemical Vapor Deposition (CVD) SiC coating, which seals the surface. See specifications.
Industry
  • Aerospace
Process
  • Optical Systems
Apparent Density g/cm3 (lb/in3)
  • 3.13 (0.113)
Bulk Density g/cm3 (lb/in3)
  • 2.95 (0.107)
SUPERSiC® is treated with a densification process that adds more SiC to the porosity of the base substrate. See specifications.
Industry
  • Aerospace
Process
  • Optical Systems
Apparent Density g/cm3 (lb/in3)
  • 3.13 (0.113)
Bulk Density g/cm3 (lb/in3)
  • 3.00 (0.109)
SUPERSiC® that has been infiltrated with high-purity silicon. See specifications.
Industry
  • Aerospace
Process
  • Optical Systems
Apparent Density g/cm3 (lb/in3)
  • 3.13 (0.113)
Bulk Density g/cm3 (lb/in3)
  • 2.93 (0.106)
Partially converted outer layers of graphite to silicon carbide. Graphite is coated with a .030” (750 microns) infiltrated layer of SUPERSiC. See specifications.
Industry
  • Semiconductor
Process
  • Ion Implant
Apparent Density g/cm3 (lb/in3)
  • 3.13 (0.113)
Bulk Density g/cm3 (lb/in3)
  • 2.18 (0.079)
Partially converted outer layers of graphite to silicon carbide. Graphite is coated with a .010” (225 microns) infiltrated layer of SUPERSiC. See specifications.
Industry
  • Semiconductor
Process
  • Ion Implant
Apparent Density g/cm3 (lb/in3)
  • 3.13 (0.113)
Bulk Density g/cm3 (lb/in3)
  • 2.07 (0.075)
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