Characterization and Removal of Metallic Contamination in Process Chemicals Using Single Particle Inductively Coupled Plasma Mass Spectrometry (SP-ICP-MS)
Tuesday, April 13 | 12:20 – 12:40 CEST
Session III: Contamination and Contamination Control
By Sampath, Siddarth; Maharjan, Kusum; Ozzello, Anthony; Bhabhe, Ashutosh
Most equipment and process engineers become experts at analyzing a wafer map to quickly identify signatures. They can easily identify when their equipment or process was the perpetrator of a maverick yield event. But as defect signatures become more subtle and harder to quickly identify, there is a significant need to consider not just what the in-line inspection systems are identifying, but specifically what they are not identifying.
To achieve optimal wafer yield and reliability, the microelectronics industry needs to address the increased materials consumption requirements and material purity challenges from chemical manufacture to point of use.