Our CMP and post-CMP solutions are engineered to deliver a high polish rate with uniform removal while minimizing micro scratch and underlayer defects. By optimizing slurry chemistry, pad performance, and cleaning formulations, we enable superior surface planarity, reduced particle contamination, and stable downstream processing. This results in cleaner wafers, higher yields, and lower cost of ownership.
Defect Prevention Solutions
CMP Contamination Control
Prevent Cu dishing, scratch, and void defects with Entegris’ integrated CMP solutions approach.
Post-CMP Contamination Control
Ensure efficient and effective residue and embedded particle removal with integrated cleaning solutions, brushes, and filtration solutions.
Process Monitoring Solutions
Control removal rate variances with liquid particle counters, particle size analyzers, and real-time concentration monitors.
Scratch Reduction Study
Our recent DOE filtration testing demonstrates that NMB filters can effectively stabilize LPC levels, achieving around 95% retention at >0.43 µm, a marked decrease in overall scratch defects to less than 10%, particularly for particles at 50 nm.