Nitride Slurries
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- CMP/lapping of nitride substrates and epi layers
- Polish all surface types (lapped or mechanically polished)
Specifications
Slurry | Process step | Polishing face best optimized for | Key features | Material removal rate |
GN 1000 series |
CMP | Gallium face and nitrogen face | Low surface roughness and defectivity for final finishing, Ra <0.2 nm | 0.5 - 1.0 µm/hr (Ga face)
2.0 - 2.5 µm/hr (N face) |
GN 2000 series | CMP | Gallium face | Optimized surface roughness for Ga face | 0.7 - 1.3 µm/hr |
GN 3000 series |
Lapping | Gallium face and nitrogen face | High removal slurries for bulk polishing and lapping | 20 - 25 µm/hr |
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