The Silicon Precursor Toolbox for
Increasing levels of vertical topography on finer structures and lower temperature budgets makes it harder to grow uniform layers of dielectric or patterning films that fulfill the performance demands necessary to produce reliable devices. This problem is not, however, insurmountable. Low-temperature deposition of SiO2 and SiN with ALD and PEALD can protect sensitive layers of the device from thermal damage while creating high-quality films.
A toolbox approach to choosing the most appropriate precursor and plasma combination for a given application makes process development more efficient, benefiting semiconductor device manufacturers and their customer.