Silicon Carbide CMP Solutions
Silicon carbide (SiC) wafers are far from average. They require unique materials and processing methods compared to traditional silicon. All semiconductor manufacturing processes create defects in the SiC crystal that can degrade electron mobility. This leads to increased electrical resistance, reduced performance, and wasted power.
Chemical mechanical planarization (CMP) plays a key role in enabling high volume manufacturing for devices built on SiC substrates. As the demand for these devices increases, optimizing the CMP process becomes crucial to ensuring the desired surface quality and planarity required for device fabrication.