We have reached an era in which a wide variety of computing applications are demanding a doubling of digital storage capacity every 1.5 years. Multiple types of memory are available to satisfy various market demands. Some applications require fast embedded devices, while others demand less speed but require low cost. NAND memory stands alone —it needs to be quite fast, but also low cost. Decades-old practices are no longer effective when shifting from 2D to 3D NAND storage and increasing the number of 3D NAND structures to 96 layers and beyond.
Vertically-stacked, 3D memory architectures offer exponential gains in flash memory storage, but they also introduce fundamental new challenges at the device fabrication and integration level. Contamination and purity challenges affect all aspects of the flash memory product chain, from design to supply to material handling, manufacturing, and delivery. We understand many of these challenges and have ideal solutions to help you tackle them. Whether it is pre-cleaning CMP brushes or changing how etch and deposition chamber tools are coated, we have expertise to help you meet the ever-increasing device storage needs.
Solving 3D NAND Material and Integration Challenges
Reducing defects. Speeding up cycle time. Improving yield. Whatever your challenge, we'll help you find an answer. Collaboration. That’s how we solve problems.
Featured White Paper
DRAM Device Fabrication: Material Challenges
This paper explains how DRAM fabrication will need to evolve to meet the demands of high-performance devices over the next few years. It explores solution options including capacitor scaling, structure and materials changes (dielectric and electrode), replacing the wordline metal, and more.
Featured White Paper
96 Layers and Beyond: Solving 3D NAND Material and Integration Challenges
This paper highlights some of the new stacking related challenges and proposes solutions to allow designers to increase the number of layers in 3D NAND structures to 96 and beyond.